The use of cavities for gettering in silicon microelectronic devices

Donnelly, S. E., Vishnyakov, Vladimir, Carter, G., Terry, J., Haworth, L.I., Sermanni, P. and Birtcher, R.C. (2003) The use of cavities for gettering in silicon microelectronic devices. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 206. pp. 422-426. ISSN 0168-583X

Abstract
Information
Library
Statistics

[+][-]

Abstract

This paper presents results from an ongoing three-year project in which the use of microcavities to getter transition metal impurities in silicon-based microelectronic devices has been investigated. The paper reports on the results of a fundamental study of bubble growth mechanisms and on a systematic study of possible detrimental effects of cavity gettering on 1.2 μm p-type metal–oxide-semiconductor field effect transistors.

Information

URI:

https://eprints.hud.ac.uk/id/eprint/18716

URI:

https://eprints.hud.ac.uk/id/eprint/18716

Title:

The use of cavities for gettering in silicon microelectronic devices

Creators:

Donnelly, S. E., Vishnyakov, Vladimir, Carter, G., Terry, J., Haworth, L.I., Sermanni, P. and Birtcher, R.C.

Identification Number:

https://doi.org/10.1016/S0168-583X(03)00783-3

Official URL: