Formation of neon induced cavities in silicon by plasma based ion implantation

Peripolli, S., Amaral, L., Oliviero, E., David, M.L., Beaufort, M.F., Barbot, J.F., Pichon, L., Drouet, M., Fichtner, P.F.P. and Donnelly, S. E. (2006) Formation of neon induced cavities in silicon by plasma based ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 249 (1-2). pp. 193-195. ISSN 0168-583X

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Abstract

Nanocavities and interstitial-type defects formed by neon plasma based ion implantation (PBII) in Si followed by annealing at 900 °C have been studied in comparison with conventional ion implantation. Implantations were performed at 250 °C and high fluence of ≈5 × 1016 cm−2. Using PBII, a rather uniform layer of cavities is observed from the surface. However, the mean diameter of cavities is smaller due to the interaction with the interstitial-type defects. In contrast with conventional implantation, these latter are created all over the cavity band because of the ion energy distribution that is characteristic of plasma based ion implantation.

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URI:

https://eprints.hud.ac.uk/id/eprint/18688

Title:

Formation of neon induced cavities in silicon by plasma based ion implantation

Creators:

Peripolli, S., Amaral, L., Oliviero, E., David, M.L., Beaufort, M.F., Barbot, J.F., Pichon, L., Drouet, M., Fichtner, P.F.P. and Donnelly, S. E.

Identification Number:

https://doi.org/10.1016/j.nimb.2006.03.112

Official URL:

http://dx.doi.org/10.1016/j.nimb.2006.03.112

Date: