Development of topography in thin (55.5 μg cm−2) self-supporting aluminium films, caused by high fluence (∼1017 ions cm−2)irradiation with 5 keV helium ions, has been observed. This has been achieved by measuring the topography-enhanced energy straggling of 0.40 MeV4He+ ions transmitted through the foils and detected with an electrostatic analyser of resolution 0.2 keV. Features, about 0.7 μm in width, are observed with scanning electron microscopy. TRIM Monte Carlo calculations of the implantation processes are performed in order to follow the helium implantation and damage depth distributions. It is deduced that a form of thin film micro-wrinkling has occurred which is caused by the relief of stress brought about by the implantation of helium.
Particle energy loss spectroscopy and SEM studies of topography development in thin aluminium films implanted with high doses of helium
Barfoot, K. M., Webb, R. P. and Donnelly, S. E.
(1984)
Particle energy loss spectroscopy and SEM studies of topography development in thin aluminium films implanted with high doses of helium.
Vacuum, 34 (10-11).
pp. 825-829.
ISSN 0042-207X
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