An in-situ TEM study of the effects of 6 keV He ion irradiation on Si and SiO2

Donnelly, S. E., Hinks, J. A., Pawley, C J, Abrams, K J and Van den Berg, Jakob (2012) An in-situ TEM study of the effects of 6 keV He ion irradiation on Si and SiO2. Journal of Physics: Conference Series, 371. 012045. ISSN 1742-6596

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URI:

https://eprints.hud.ac.uk/id/eprint/16008

URI:

https://eprints.hud.ac.uk/id/eprint/16008

URI:

https://eprints.hud.ac.uk/id/eprint/16008

Title:

An in-situ TEM study of the effects of 6 keV He ion irradiation on Si and SiO2

Creators:

Donnelly, S. E., Hinks, J. A., Pawley, C J, Abrams, K J and Van den Berg, Jakob

Identification Number:

10.1088/1742-6596/371/1/012045

Official URL:

http://dx.doi.org/10.1088/1742-6596/371/1/012045

Date:

January 2012

Subjects:

Q Science > Q Science (General)
Q Science > QC Physics

Schools:

School of Computing and Engineering
School of Computing and Engineering > Electron Microscopy and Materials Analysis

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Item Type:

Article

Depositing User:

Jonathan Hinks

Date Deposited:

27 Nov 2012 16:07

Revision:

Last Modified:

28 Aug 2021 20:20

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