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Formation of neon induced cavities in silicon by plasma based ion implantation

Peripolli, S., Amaral, L., Oliviero, E., David, M.L., Beaufort, M.F., Barbot, J.F., Pichon, L., Drouet, M., Fichtner, P.F.P. and Donnelly, S. E. (2006) Formation of neon induced cavities in silicon by plasma based ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 249 (1-2). pp. 193-195. ISSN 0168-583X

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Nanocavities and interstitial-type defects formed by neon plasma based ion implantation (PBII) in Si followed by annealing at 900 °C have been studied in comparison with conventional ion implantation. Implantations were performed at 250 °C and high fluence of ≈5 × 1016 cm−2. Using PBII, a rather uniform layer of cavities is observed from the surface. However, the mean diameter of cavities is smaller due to the interaction with the interstitial-type defects. In contrast with conventional implantation, these latter are created all over the cavity band because of the ion energy distribution that is characteristic of plasma based ion implantation.

Item Type: Article
Subjects: Q Science > QC Physics
Schools: School of Computing and Engineering > Electron Microscopy and Materials Analysis
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Depositing User: Graeme Greaves
Date Deposited: 02 Oct 2013 08:31
Last Modified: 28 Aug 2021 11:32


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