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An in-situ TEM study of the effects of 6 keV He ion irradiation on Si and SiO2

Donnelly, S. E., Hinks, J. A., Pawley, C J, Abrams, K J and Van den Berg, Jakob (2012) An in-situ TEM study of the effects of 6 keV He ion irradiation on Si and SiO2. Journal of Physics: Conference Series, 371. 012045. ISSN 1742-6596
Information
URI:
https://eprints.hud.ac.uk/id/eprint/16008
Title:
An in-situ TEM study of the effects of 6 keV He ion irradiation on Si and SiO2
Creators:
Donnelly, S. E., Hinks, J. A., Pawley, C J, Abrams, K J and Van den Berg, Jakob
Identification Number:
https://doi.org/10.1088/1742-6596/371/1/012045
Official URL:
http://dx.doi.org/10.1088/1742-6596/371/1/012045
Date:
January 2012
Subjects:
Q Science > Q Science (General)
Q Science > QC Physics
Schools:
School of Computing and Engineering
School of Computing and Engineering > Electron Microscopy and Materials Analysis
Library
Item Type:
Article
Depositing User:
Jonathan Hinks
Date Deposited:
27 Nov 2012 16:07
Revision:
21
Last Modified:
28 Aug 2021 20:20
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