Kinetics of diamond growth on Si(100) substrate monitored by electron spectroscopy

Lenormand, F, Ababou, Abdessamad, Carriere, B, Romeo, M, Fayette, L, Marcus, B and Mermoux, M (1993) Kinetics of diamond growth on Si(100) substrate monitored by electron spectroscopy. Diamond and Related Materials, 2 (2-4). pp. 552-557. ISSN 0925-9635

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Abstract

The nucleation and growth of diamond on Si(100) were studied by X-ray photoelectron spectroscopy. We focus on the early stages of growth. The main results of this study are that the diamond growth needs an induction period before starting. The surface carbon content drops initially, which is interpreted as the diffusion of silicon to form carbide and/or carbon removal.

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https://eprints.hud.ac.uk/id/eprint/6825

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https://eprints.hud.ac.uk/id/eprint/6825

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https://eprints.hud.ac.uk/id/eprint/6825

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https://eprints.hud.ac.uk/id/eprint/6825

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https://eprints.hud.ac.uk/id/eprint/6825

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https://eprints.hud.ac.uk/id/eprint/6825

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https://eprints.hud.ac.uk/id/eprint/6825

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https://eprints.hud.ac.uk/id/eprint/6825

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https://eprints.hud.ac.uk/id/eprint/6825

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https://eprints.hud.ac.uk/id/eprint/6825

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https://eprints.hud.ac.uk/id/eprint/6825

Title:

Kinetics of diamond growth on Si(100) substrate monitored by electron spectroscopy

Creators:

Lenormand, F, Ababou, Abdessamad, Carriere, B, Romeo, M, Fayette, L, Marcus, B and Mermoux, M

Identification Number:

10.1016/0925-9635(93)90119-M

Official URL:

http://dx.doi.org/10.1016/0925-9635(93)90119-M

Date:

March 1993

Subjects:

Q Science > Q Science (General)

Schools:

School of Applied Sciences

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Item Type:

Article

Depositing User:

Sharon Beastall

Date Deposited:

22 Jan 2010 10:24

Revision:

9

Last Modified:

28 Aug 2021 10:54

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