Kinetics of diamond growth on Si(100) substrate monitored by electron spectroscopy

Lenormand, F, Ababou, Abdessamad, Carriere, B, Romeo, M, Fayette, L, Marcus, B and Mermoux, M (1993) Kinetics of diamond growth on Si(100) substrate monitored by electron spectroscopy. Diamond and Related Materials, 2 (2-4). pp. 552-557. ISSN 0925-9635

Abstract
Information
Library
Statistics

[+][-]

Abstract

The nucleation and growth of diamond on Si(100) were studied by X-ray photoelectron spectroscopy. We focus on the early stages of growth. The main results of this study are that the diamond growth needs an induction period before starting. The surface carbon content drops initially, which is interpreted as the diffusion of silicon to form carbide and/or carbon removal.

Information

URI:

https://eprints.hud.ac.uk/id/eprint/6825

Title:

Kinetics of diamond growth on Si(100) substrate monitored by electron spectroscopy

Creators:

Lenormand, F, Ababou, Abdessamad, Carriere, B, Romeo, M, Fayette, L, Marcus, B and Mermoux, M

Identification Number:

https://doi.org/10.1016/0925-9635(93)90119-M

Official URL:

http://dx.doi.org/10.1016/0925-9635(93)90119-M

Date: