Atom-by-Atom STEM Investigation of Defect Engineering in Graphene

Ramasse, Q.M., Kepapstoglou, D.M., Hage, F.S., Susi, T., Kotakoski, J., Mangler, C., Ayala, P., Meyer, J., Hinks, J. A., Donnelly, S. E., Zan, R., Pan, C.T., Haigh, S.J. and Bangert, U. (2014) Atom-by-Atom STEM Investigation of Defect Engineering in Graphene. Microscopy and Microanalysis, 20 (S3). pp. 1736-1737. ISSN 1431-9276

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URI:

https://eprints.hud.ac.uk/id/eprint/24410

URI:

https://eprints.hud.ac.uk/id/eprint/24410

URI:

https://eprints.hud.ac.uk/id/eprint/24410

URI:

https://eprints.hud.ac.uk/id/eprint/24410

URI:

https://eprints.hud.ac.uk/id/eprint/24410

URI:

https://eprints.hud.ac.uk/id/eprint/24410

Title:

Atom-by-Atom STEM Investigation of Defect Engineering in Graphene

Creators:

Ramasse, Q.M., Kepapstoglou, D.M., Hage, F.S., Susi, T., Kotakoski, J., Mangler, C., Ayala, P., Meyer, J., Hinks, J. A., Donnelly, S. E., Zan, R., Pan, C.T., Haigh, S.J. and Bangert, U.

Identification Number:

10.1017/S1431927614010411

Official URL:

http://dx.doi.org/10.1017/S1431927614010411

Date:

August 2014

Subjects:

Q Science > QC Physics

Schools:

School of Computing and Engineering > Electron Microscopy and Materials Analysis

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