An in-situ TEM investigation of He bubble evolution in SiC

This paper presents work using the capabilities of two TEM with in-situ ion
irradiation facilities: Microscope and Ion Accelerator for Materials Investigation (MIAMI) at
the University of Huddersfield and Joint Accelerators for Nano-science and Nuclear
Simulation JANNuS at Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
(CSNSM), Orsay, France, to study the nucleation and growth of He bubbles in silicon carbide
(SiC) and to carry out an investigation into bubble behaviour at high temperatures and under
displacing irradiation. Preliminary results on bubble nucleation and growth during He
irradiation of SiC are presented together with results from a simultaneous anneal and highenergy
heavy-ion irradiation of samples containing He bubbles. The displacing irradiation is
observed to impede He bubble growth resulting in smaller bubbles than those obtained from an
anneal alone. A tentative interpretation of these observations is presented.