Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering

Quinn, P. D.; Wilson, N. R.; Hatfield, S. A.; McConville, C. F.; Bell, G. R.; Noakes, T. C. Q.; Bailey, Paul; Al-Harthi, S.; Gard, F.

Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering

Quinn, P. D., Wilson, N. R., Hatfield, S. A., McConville, C. F., Bell, G. R., Noakes, T. C. Q., Bailey, Paul, Al-Harthi, S. and Gard, F. (2005) Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering. Applied Physics Letters, 87 (15). p. 153110. ISSN 0003-6951

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Abstract

The composition profile along the [001] growth direction of low-growth-rate InAs–GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra

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URI:

https://eprints.hud.ac.uk/id/eprint/14856

Title:

Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering

Creators:

Quinn, P. D., Wilson, N. R., Hatfield, S. A., McConville, C. F., Bell, G. R., Noakes, T. C. Q., Bailey, Paul, Al-Harthi, S. and Gard, F.

Identification Number:

10.1063/1.2099533

Official URL:

http://dx.doi.org/10.1063/1.2099533

Date: