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Chemical and optical profiling of ultra thin high-k dielectrics on silicon

Bernardini, S., MacKenzie, M., Buiu, O., Bailey, Paul, Noakes, T.C.Q., Davey, W.M., Hamilton, B. and Hall, S. (2008) Chemical and optical profiling of ultra thin high-k dielectrics on silicon. Thin Solid Films, 517 (1). pp. 459-461. ISSN 0040-6090
Abstract

The thickness of HfO2 and hafnium silicate HfxSi1 − xOy thin films with a range of compositions are investigated using three complementary analytical techniques. We compare results obtained from Medium Energy Ion Scattering spectroscopy, spectroellipsometry and high-resolution Transmission Electron Microscopy. Our results demonstrate that the thickness of the silicate layers decreases with the Hf content

Information
URI:
https://eprints.hud.ac.uk/id/eprint/12447
URI:
https://eprints.hud.ac.uk/id/eprint/12447
URI:
https://eprints.hud.ac.uk/id/eprint/12447
URI:
https://eprints.hud.ac.uk/id/eprint/12447
URI:
https://eprints.hud.ac.uk/id/eprint/12447
Title:
Chemical and optical profiling of ultra thin high-k dielectrics on silicon
Creators:
Bernardini, S., MacKenzie, M., Buiu, O., Bailey, Paul, Noakes, T.C.Q., Davey, W.M., Hamilton, B. and Hall, S.
Identification Number:
10.1016/j.tsf.2008.08.048
Official URL:
http://dx.doi.org/10.1016/j.tsf.2008.08.048
Date:
November 2008
Subjects:
Q Science > QC Physics
Schools:
School of Applied Sciences
Library
Item Type:
Article
Depositing User:
Sharon Beastall
Date Deposited:
10 Jan 2012 11:00
Revision:
11
Last Modified:
28 Aug 2021 11:13
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