Abstract
  Highly dense hexagonally ordered two-dimensional arrays of Si nanocrystals embedded in SiO2 nanodots were fabricated on a silicon substrate by using a self-assembled porous anodic alumina thin film as a masking layer through which electrochemical oxidation of the Si substrate and ultralow energy Si implantation took place. After removal of the alumina film and high temperature annealing of the samples, hexagonally ordered Si nanocrystals embedded within SiO2 nanodots were obtained, having sizes in the few tens of nanometer range. The fabricated ordered structures show significant potential for applications either in basic physics experiments or as building blocks for nanoelectronic and nanophotonic devices.
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