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Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru: Process Characteristics, Surface Chemistry, and Film Properties

Popovici, Mihaela, Groven, Benjamin, Marcoen, Kristof, Phung, Quan Manh, Dutta, Shibesh, Swerts, Johan, Meersschaut, Johan, Van den Berg, Jakob, Franquet, Alexis, Moussa, Alain, Vanstreels, Kris, Lagrain, Pieter, Bender, Hugo, Jurczak, Malgorzata, Van Elshocht, Sven, Delabie, Annelies and Adelmann, Christoph (2017) Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru: Process Characteristics, Surface Chemistry, and Film Properties. Chemistry of Materials, 29 (11). pp. 4654-4666. ISSN 0897-4756

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Abstract

The process characteristics, the surface chemistry, and the resulting film properties of Ru deposited by atomic layer deposition from (ethylbenzyl)(1-ethyl-1,4-cyclohexadienyl)Ru(0) (EBECHRu) and O2 are discussed. The surface chemistry was characterized by both combustion reactions as well as EBECHRu surface reactions by ligand release. The process behavior on TiN starting surfaces at 325 °C was strongly influenced by Ti(O,N)x segregation on the growing Ru surface with consequences for both the growth per cycle as well as the film properties. For optimized process conditions, the films showed high purity with low C and O concentrations of the order of 1020 at./cm3. Higher deposition temperature led to strong (001) fiber texture of the films on SiO2 starting surfaces. Annealing in forming gas improved the crystallinity and led to resistivity values as low as 11 μΩcm for Ru films with a thickness of 10 nm

Item Type: Article
Subjects: Q Science > QC Physics
Schools: School of Computing and Engineering
School of Computing and Engineering > International Institute for Accelerator Applications
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Depositing User: Jakob Van Den Berg
Date Deposited: 16 Aug 2017 13:26
Last Modified: 16 Aug 2017 13:26
URI: http://eprints.hud.ac.uk/id/eprint/32587

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