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Understanding the EOT–Jg degradation in Ru/SrTiOx/Ru metal–insulator–metal capacitors formed with Ru atomic layer deposition

Popovici, M., Redolfi, A., Aoulaiche, M., van den Berg, Jakob, Douhard, B., Swerts, J., Bailey, Paul, Kaczer, B., Groven, B., Meersschaut, J., Conard, T., Moussa, A., Adelmann, C., Delabie, A., Fazan, P., Van Elshocht, S. and Jurczak, M. (2015) Understanding the EOT–Jg degradation in Ru/SrTiOx/Ru metal–insulator–metal capacitors formed with Ru atomic layer deposition. Microelectronic Engineering, 147. pp. 108-112. ISSN 0167-9317

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Abstract

The impact of different Ru precursors and/or deposition methods on the electrical characteristics of Ru/SrTiOx/Ru capacitors has been investigated. The observed increase of the leakage current density (Jg) and the equivalent oxide thickness (EOT) for ALD (atomic layer deposition) deposited Ru layers compared to PVD (physical vapor deposition) deposited ones was found to be caused by a SrRuTiOx layer formation at the SrTiOx/Ru interface aided by the presence of the oxygen co-reactant used during the ALD, regardless of the precursor used

Item Type: Article
Subjects: Q Science > QC Physics
Schools: School of Computing and Engineering > International Institute for Accelerator Applications
School of Computing and Engineering
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Depositing User: Jakob Van Den Berg
Date Deposited: 02 Feb 2017 15:23
Last Modified: 02 Feb 2017 15:23
URI: http://eprints.hud.ac.uk/id/eprint/31022

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