Quantitative considerations in Medium Energy Ion Scattering

Due to its unique capability of providing near-quantitative compositional and layer structure information during depth profiling analysis, in favourable cases, with sub-nanometre resolution,medium energy ion scattering (MEIS) is becoming increasingly important to the characterisation of microelectronic device structures in which scaling laws have demanded the growth and doping of layers of nanometre thickness. Here we assess the quantitative accuracy in terms of both depth and concentration, that can be achieved in MEIS depth profiling.