Hydrogen induced growth and coalescence of helium-based defects

Vallet, Maxime, Barbot, Jean-François, Donnelly, S. E., Hinks, J. A. and Beaufort, Marie-France (2015) Hydrogen induced growth and coalescence of helium-based defects. physica status solidi (c), 12 (8). pp. 1156-1159. ISSN 1862-6351

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Abstract

The first stages of growth of He-based planar defects under H supply have been investigated in (001)-oriented Si. The H atoms were introduced by implantation using the MIAMI facility. Implantations at different temperatures were conducted in the microscope chamber and thus the evolution of He-plates under H implantation was observed in real-time. In situ transmission electron microscopy during the subsequent annealing was also performed. Results show that the growth phenomena are governed by diffusion mechanisms. The kinetic model of Johnson-Mehl-Avrami-Kolmogorov was successfully applied to model the evolution of the diameters of the He-plates either as function of the temperature of annealing or of the fluence. Isotropic coalescence of close defects occurs when the out-of plane tensile stress reaches the yield strength.

Item Type:	Article
Subjects:	Q Science > QC Physics
Schools:	School of Computing and Engineering School of Computing and Engineering > Pedagogical Research Group
Related URLs:	Author Author
Depositing User:	Jonathan Hinks
Date Deposited:	02 Sep 2015 08:47
Last Modified:	28 Aug 2021 17:53
URI:	http://eprints.hud.ac.uk/id/eprint/25566

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