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Transit-time limitations in p-i-n photodiodes

Sibley, Martin J.N. and Bellon, Jacques A. (2000) Transit-time limitations in p-i-n photodiodes. Microwave and Optical Technology Letters, 26 (5). pp. 282-286. ISSN 08952477

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A novel derivation for predicting transit-time effects in p-i-n photodiodes is described in which the diode current is found by simple integration. Experimental results obtained from two wide-area photodiodes compare well with theoretical predictions. It is also shown that previously published theory does not agree with these experimental observations.

Item Type: Article
Subjects: T Technology > T Technology (General)
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Schools: School of Computing and Engineering
School of Computing and Engineering > Systems Engineering Research Group
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Depositing User: Sara Taylor
Date Deposited: 24 Oct 2008 13:18
Last Modified: 28 Aug 2021 10:42


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