Atom-by-Atom STEM Investigation of Defect Engineering in Graphene

Ramasse, Q.M., Kepapstoglou, D.M., Hage, F.S., Susi, T., Kotakoski, J., Mangler, C., Ayala, P., Meyer, J., Hinks, J. A., Donnelly, S. E., Zan, R., Pan, C.T., Haigh, S.J. and Bangert, U. (2014) Atom-by-Atom STEM Investigation of Defect Engineering in Graphene. Microscopy and Microanalysis, 20 (S3). pp. 1736-1737. ISSN 1431-9276

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Item Type:	Article
Subjects:	Q Science > QC Physics
Schools:	School of Computing and Engineering > Electron Microscopy and Materials Analysis
Depositing User:	Graeme Greaves
Date Deposited:	06 May 2015 15:22
Last Modified:	28 Aug 2021 18:11
URI:	https://eprints.hud.ac.uk/id/eprint/24410

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