Ramasse, Q.M., Kepapstoglou, D.M., Hage, F.S., Susi, T., Kotakoski, J., Mangler, C., Ayala, P., Meyer, J., Hinks, J. A., Donnelly, S. E., Zan, R., Pan, C.T., Haigh, S.J. and Bangert, U. (2014) Atom-by-Atom STEM Investigation of Defect Engineering in Graphene. Microscopy and Microanalysis, 20 (S3). pp. 1736-1737. ISSN 1431-9276
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Official URL: http://dx.doi.org/10.1017/S1431927614010411
Item Type: | Article |
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Subjects: | Q Science > QC Physics |
Schools: | School of Computing and Engineering > Electron Microscopy and Materials Analysis |
Depositing User: | Graeme Greaves |
Date Deposited: | 06 May 2015 15:22 |
Last Modified: | 28 Aug 2021 18:11 |
URI: | http://eprints.hud.ac.uk/id/eprint/24410 |
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