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Ti3SiC2-formation during Ti–C–Si multilayer deposition by magnetron sputtering at 650 °C

Vishnyakov, Vladimir, Lu, J., Eklund, P., Hultman, L. and Colligon, John (2013) Ti3SiC2-formation during Ti–C–Si multilayer deposition by magnetron sputtering at 650 °C. Vacuum, 93. pp. 56-59. ISSN 0042-207X

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Titanium Silicon Carbide films were deposited from three separate magnetrons with elemental targets onto Si wafer substrates. The substrate was moved in a circular motion such that the substrate faces each magnetron in turn and only one atomic species (Ti, Si or C) is deposited at a time. This allows layer-by-layer film deposition. Material average composition was determined to Ti0.47Si0.14C0.39 by energy-dispersive X-ray spectroscopy. High-resolution transmission electron microscopy and Raman spectroscopy were used to gain insights into thin film atomic structure arrangements. Using this new deposition technique formation of Ti3SiC2 MAX phase was obtained at a deposition temperature of 650 °C, while at lower temperatures only silicides and carbides are formed. Significant sharpening of Raman E2g and Ag peaks associated with Ti3SiC2 formation was observed.

Item Type: Article
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Schools: School of Computing and Engineering
School of Computing and Engineering > Electron Microscopy and Materials Analysis
Depositing User: Sharon Beastall
Date Deposited: 09 Oct 2014 10:53
Last Modified: 28 Aug 2021 18:51


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