A dual-source low-energy mass-analysed ion beam system for semiconductor epitaxy and novel materials growth

Gordon, J.S., Armour, D.G., van den Berg, J.A., Donnelly, S. E., Marton, D. and Rabalais, J.W. (1991) A dual-source low-energy mass-analysed ion beam system for semiconductor epitaxy and novel materials growth. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59-60 (1). pp. 312-315. ISSN 0168-583X

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Abstract

A dual-source mass-analysed low-energy ion beam system, intended for investigations into novel materials deposition and epitaxial layer growth, is described. The investigations require that uniform ion beams of useful flux and area, with an energy range reaching below damage thresholds, can be delivered into an ultrahigh vacuum target environment. The system described has been designed to provide 100 μA cm−2 beams of a wide range of species, fast switching between different species, and energies down to 10 eV and below.

Item Type:	Article
Subjects:	Q Science > QC Physics
Schools:	School of Computing and Engineering > Electron Microscopy and Materials Analysis
Related URLs:	Author
Depositing User:	Graeme Greaves
Date Deposited:	02 Oct 2013 08:59
Last Modified:	28 Aug 2021 11:32
URI:	http://eprints.hud.ac.uk/id/eprint/18695

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