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Ion beam deposition and in-situ ion beam analysis

Al-Bayati, A.H., Orrman-Rossiter, K.G., Armour, D.G., Van den Berg, J.A. and Donnelly, S. E. (1992) Ion beam deposition and in-situ ion beam analysis. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 63 (1-2). pp. 109-119. ISSN 0168-583X

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The direct deposition in thin films and the production of very shallow junctions by ultralow energy ion implantation involves the interaction of ions with only the outermost surface layers of a solid. Quantitative structural and composition analysis of the grown or implanted layers requires the use of techniques with extremely high depth resolution.

The growth of Si epitaxially on Si (100) substrates prepared by a variety of ion beam and thermal treatments has illustrated the complex radiation effects that occur in the bombardment energy range from 20 to 500 eV. These effects have been studied using medium energy ion scattering in the double alignment mode. With a 50 keV H+ beam, a high resolution electrostatic analyser and incidence and emergence directions aligned with the [111̄] and [3̄3̄1] directions, a depth resolution of 3 Å can be obtained. The effects of ion energy on the structure of grown films and on the damage in the substrate during pretreatment with Cl+ and Ar+ ions will be described.

Item Type: Article
Subjects: Q Science > QC Physics
Schools: School of Computing and Engineering > Electron Microscopy and Materials Analysis
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Depositing User: Graeme Greaves
Date Deposited: 02 Oct 2013 09:05
Last Modified: 28 Aug 2021 11:32


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