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Extended-type defects created by high temperature helium implantation into silicon

Beaufort, M.F., Donnelly, S. E., Rousselet, S., David, M.L. and Barbot, J.F. (2006) Extended-type defects created by high temperature helium implantation into silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 242 (1-2). pp. 565-567. ISSN 0168-583X

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Following helium implantation (50 keV, 5 × 1016 cm−2) at 800 °C in silicon, only {1 1 3} defects are present spreading out beyond the maximum of the damage distribution. Both linear rod-like defects as well as so-called ribbon-like {1 1 3} defects are observed. During annealing at 800 °C, the number of interstitials in ribbon-like defects appears to increase at the expense of the rod-like defects. After annealing at 1000 °C, only a row of dislocation loops is observed. These results suggest that the formation energy of the ribbon-like defects may be lower than that of the rod-like defects.

Item Type: Article
Subjects: Q Science > QC Physics
Schools: School of Computing and Engineering > Electron Microscopy and Materials Analysis
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Depositing User: Graeme Greaves
Date Deposited: 02 Oct 2013 08:09
Last Modified: 28 Aug 2021 11:32


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