Modification of He implantation induced defects using fluorine co-implantation

Alquier, D., Gaudin, G., Beaufort, M.F., Donnelly, S. E., Haworth, L. and Cayrel, F. (2007) Modification of He implantation induced defects using fluorine co-implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 257 (1-2). pp. 240-243. ISSN 0168-583X

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Abstract

During device manufacture, metal contamination has a large effect on silicon-based device performance. Of the available gettering techniques, helium implantation is widely used but the high fluence required is a major drawback. In this paper, the impact of F co-implantation on He implantation-induced defects has been carefully studied. Firstly, our results show that both interstitial and vacancy defects are present in the defect band for all implantation conditions. We show that F implantation may lead to cavity formation at high temperature as expected. The TEM observations also show that, at high temperature, the shape and size of the He-induced defects are significantly affected by the fluorine co-implantation. In particular, cavities are drastically modified by the addition of F, which promotes cavity growth. These results enable us to understand the defect interactions better and constitute a good background to gettering techniques for future device processing.

Item Type:	Article
Subjects:	Q Science > QC Physics
Schools:	School of Computing and Engineering > Electron Microscopy and Materials Analysis
Related URLs:	Author
Depositing User:	Graeme Greaves
Date Deposited:	02 Oct 2013 08:27
Last Modified:	28 Aug 2021 11:32
URI:	http://eprints.hud.ac.uk/id/eprint/18686

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