Observation of atomic processes in Xe nanocrystals embedded in Al under 1 MeV electron irradiation

Mitsuishi, K, Song, M, Furuya, K, Birtcher, R.C, Allen, C.W and Donnelly, S. E. (1999) Observation of atomic processes in Xe nanocrystals embedded in Al under 1 MeV electron irradiation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 148 (1-4). pp. 184-188. ISSN 0168-583X

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Abstract

Defect introduction processes in two differently sized Xe nanocrystals embedded in Al were observed with in situ high-resolution electron microscopy. The imaging conditions made it possible to follow the apparent movement of Xe atom columns within a nanocrystal. The positions of individual atom columns were measured on captured video images, before and after defect introduction, from intensity traces along the rows of atom columns. For each of these precipitates, a planar defect appears on {1 1 1}. The observed displacement of Xe atom columns approximately corresponds to the projected displacement produced by a Shockley partial dislocation, bounding an intrinsic stacking fault. Comparison of the displacements of atoms in the two nanocrystals shows that the displacements are reduced at the precipitate/matrix interfaces. This implies that there will be a displacement at interfaces that represents some compromise between the strain field of the partial dislocation and the interface compatibility requirement.

Item Type:	Article
Subjects:	Q Science > QC Physics
Schools:	School of Computing and Engineering > Electron Microscopy and Materials Analysis
Related URLs:	Author
Depositing User:	Graeme Greaves
Date Deposited:	02 Oct 2013 10:42
Last Modified:	02 Oct 2013 10:42
URI:	http://eprints.hud.ac.uk/id/eprint/18654

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