A new technique for the measurement of implanted He profiles in nickel

Donnelly, S. E., Whitmell, D. S. and Nelson, R. S. (1977) A new technique for the measurement of implanted He profiles in nickel. Radiation Effects, 33 (3). pp. 145-148. ISSN 0033-7579

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Abstract

A new technique of measuring the range of helium ions implanted at low concentrations into nickel is described. The residual amount of helium in a foil is measured by a combination of gas release and selective vibro-polishing. The method, illustrated by the results of some preliminary experiments, is sufficiently sensitive to enable the range, to be measured with peak implanted gas concentrations of the order of 10−7 atoms per nickel atom (i.e. a sensitivity limit of 10−8 atom/atom) where bubble formation is unlikely. The mean projected range of 100 keV helium ions in nickel was found to be 2800 Å, together with a second peak at 5250 Å which is thought to be due to channelling. A significant fraction of the helium diffused interstitially to depths greater than 1 μm.

Item Type:	Article
Subjects:	Q Science > QC Physics
Schools:	School of Computing and Engineering > Electron Microscopy and Materials Analysis
Related URLs:	Author
Depositing User:	Graeme Greaves
Date Deposited:	02 Oct 2013 07:53
Last Modified:	02 Oct 2013 07:53
URI:	http://eprints.hud.ac.uk/id/eprint/18623

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