Goel, Saurav, Luo, Xichun and Reuben, Robert L. (2012) Shear instability of nanocrystalline silicon carbide during nanometric cutting. Applied Physics Letters, 100 (23). p. 231902. ISSN 0003-6951
Metadata only available from this repository.Abstract
The shear instability of the nanoscrystalline 3C-SiC during nanometric cutting at a cutting speed of 100 m/s has been investigated using molecular dynamics simulation. The deviatoric stress in the cutting zone was found to cause sp3-sp2 disorder resulting in the local formation of SiC-graphene and Herzfeld-Mott transitions of 3C-SiC at much lower transition pressures than that required under pure compression. Besides explaining the ductility of SiC at 1500 K, this is a promising phenomenon in general nanoscale engineering of SiC. It shows that modifying the tetrahedral bonding of 3C-SiC, which would otherwise require sophisticated pressure cells, can be achieved more easily by introducing non-hydrostatic stress conditions.
Item Type: | Article |
---|---|
Subjects: | T Technology > T Technology (General) T Technology > TJ Mechanical engineering and machinery |
Schools: | School of Computing and Engineering School of Computing and Engineering > Centre for Precision Technologies |
Related URLs: | |
Depositing User: | Sara Taylor |
Date Deposited: | 15 Nov 2012 12:21 |
Last Modified: | 28 Aug 2021 11:24 |
URI: | http://eprints.hud.ac.uk/id/eprint/16101 |
Downloads
Downloads per month over past year
Repository Staff Only: item control page
![]() |
View Item |