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Quinn, P. D., Wilson, N. R., Hatfield, S. A., McConville, C. F., Bell, G. R., Noakes, T. C. Q., Bailey, Paul, Al-Harthi, S. and Gard, F. (2005) Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering. Applied Physics Letters, 87 (15). p. 153110. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.2099533
DOI: 10.1063/1.2099533
Abstract
The composition profile along the [001] growth direction of low-growth-rate InAs–GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra
| Item Type: | Article |
|---|---|
| Subjects: | Q Science > Q Science (General) Q Science > QC Physics |
| Schools: | School of Applied Sciences |
| Related URLs: | |
| Depositing User: | Sharon Beastall |
| Date Deposited: | 12 Sep 2012 11:01 |
| Last Modified: | 05 Apr 2018 13:45 |
| URI: | http://eprints.hud.ac.uk/id/eprint/14856 |
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