Chemical and optical profiling of ultra thin high-k dielectrics on silicon

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Bernardini, S., MacKenzie, M., Buiu, O., Bailey, Paul, Noakes, T.C.Q., Davey, W.M., Hamilton, B. and Hall, S. (2008) Chemical and optical profiling of ultra thin high-k dielectrics on silicon. Thin Solid Films, 517 (1). pp. 459-461. ISSN 0040-6090

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Official URL: http://dx.doi.org/10.1016/j.tsf.2008.08.048

DOI: 10.1016/j.tsf.2008.08.048

Abstract

The thickness of HfO2 and hafnium silicate HfxSi1 − xOy thin films with a range of compositions are investigated using three complementary analytical techniques. We compare results obtained from Medium Energy Ion Scattering spectroscopy, spectroellipsometry and high-resolution Transmission Electron Microscopy. Our results demonstrate that the thickness of the silicate layers decreases with the Hf content

Item Type:	Article
Subjects:	Q Science > QC Physics
Schools:	School of Applied Sciences
Depositing User:	Sharon Beastall
Date Deposited:	10 Jan 2012 11:00
Last Modified:	04 Sep 2012 09:50
URI:	http://eprints.hud.ac.uk/id/eprint/12447

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