Founta, S., Coraux, J., Jalabert, D., Bougerol, C., Rol, F., Mariette, H., Renevier, H., Daudin, B., Oliver, R. A., Humphreys, C. J., Noakes, T. C. Q. and Bailey, Paul (2007) Anisotropic strain relaxation in a-plane GaN quantum dots. Journal of Applied Physics, 101 (6). 063541. ISSN 0021-8979

Medium energy ion scattering (MEIS) has been used to measure at the monolayer scale the strain profile of self-organized GaN quantum dots grown on (11–20) or a-plane AlN by molecular-beam epitaxy. By confronting the MEIS results with a structural analysis carried out by atomic force microscopy, it is established that the strain profile is anisotropic, i.e., fully elastic along [1–100] and a combination of plastic and elastic along [0001]. High resolution transmission electron microscopy measurements reveal the presence of misfit dislocations with 1/2 [0001] Burgers vector, consistent with MEIS data

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