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Items where Author is Van Den Berg, Jakob

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Number of items: 35.

A

Abrams, K. J., Hinks, J. A., Pawley, C. J., Greaves, Graeme, Van den Berg, Jakob, Eyidi, D., Ward, M. B. and Donnelly, S. E. (2012) Helium irradiation effects in polycrystalline Si, silica, and single crystal Si. Journal of Applied Physics, 111 (8). 083527-083533. ISSN 0021-8979

B

Barlow, Roger and Van den Berg, Jakob (2012) The UK MEIS facility. In: Proceedings of the Third International Particle Accelerator Conference. IPAC 2012 . JACoW, New Orleans, Louisiana, USA, pp. 4151-4153. ISBN 978-3-95450-115-1

Bangert, U., Bleloch, A., Gass, M., Seepujak, A. and Van den Berg, Jakob (2010) Doping of few-layered graphene and carbon nanotubes using ion implantation. Physical Review B, 81 (24). p. 245423. ISSN 1098-0121

C

Conard, Thierry, Franquet, Alexis, Vandervorst, Wifried, Reading, Michael, Van den Berg, Jakob, Van Elschocht, Sven, Schram, Tom, Adelmann, Christoph and De Gendt, Stefan (2008) Physical Characterization of the Metal/High-k Layer Interaction upon Annealing. ECS Transactions, 16 (5). pp. 433-442. ISSN 1938-5862

D

Demenev, E., Giubertoni, D., Van den Berg, Jakob, Reading, M. and Bersani, M. (2012) Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 273. pp. 192-194. ISSN 0168-583X

Donnelly, S. E., Hinks, J. A., Pawley, C J, Abrams, K J and Van den Berg, Jakob (2012) An in-situ TEM study of the effects of 6 keV He ion irradiation on Si and SiO2. Journal of Physics: Conference Series, 371. 012045. ISSN 1742-6596

G

Giubertoni, D., Pepponi, G., Beckhoff, B., Hoenicke, P., Gennaro, S., Meirer, F., Ingerle, D., Steinhauser, G., Fried, M., Petrik, P., Parisini, A., Reading, M. A., Streli, C., Van den Berg, Jakob, Bersani, M., Secula, Erik M., Seiler, David G., Khosla, Rajinder P., Herr, Dan, Michael Garner, C., McDonald, Robert and Diebold, Alain C. (2009) Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. AIP Conference Proceedings, 1173. pp. 45-49. ISSN 0094-243X

H

Hinks, J. A., Jones, A N, Theodosiou, A, Van den Berg, Jakob and Donnelly, S. E. (2012) Transmission Electron Microscopy Study of Graphite underin situIon Irradiation. Journal of Physics: Conference Series, 371. 012046. ISSN 1742-6596

Hourdakis, E., Nassiopoulou, A. G., Parisini, A., Reading, M. A., Van den Berg, Jakob, Sygellou, L., Ladas, S., Petrik, P., Nutsch, A., Wolf, M. and Roeder, G. (2011) Electrical and structural properties of ultrathin SiON films on Si prepared by plasma nitridation. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 29 (2). 022201. ISSN 1071-1023

Hinks, J. A., Van den Berg, Jakob and Donnelly, S. E. (2011) MIAMI: Microscope and ion accelerator for materials investigations. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 29 (2). 021003. ISSN 07342101

Hönicke, Philipp, Beckhoff, Burkhard, Kolbe, Michael, Giubertoni, Damiano, Van den Berg, Jakob and Pepponi, Giancarlo (2010) Depth profile characterization of ultra shallow junction implants. Analytical and bioanalytical chemistry, 396 (8). pp. 2825-2832. ISSN 1618-2642

Hourdakis, Emmanouel, Theodoropoulou, M, Nassiopoulou, Androula G., Parisini, Andrea, Reading, Michael A., Van den Berg, Jakob, Conard, T. and Degendt, S. (2009) Comparison oF Electrical Measurements with Structural Analysis of Thin High-k Hafnium-based Films. ECS Transactions, 25 (3). pp. 363-372. ISSN 1938-5862

Hatzopoulos, N., Suder, S., Van den Berg, Jakob, Panknin, D., Fukarek, W., Donnelly, S. E., Cook, C.E.A., Armour, D.G., Lucassen, M., Frey, I., Foad, M.A., England, J.G., Moffatt, S., Bailey, Paul, Noakes, T.C. and Ohno, H. (1997) Range and damage distributions in ultra-low energy boron implantation into silicon. In: Ion implantation technology--96: proceedings of the Eleventh International Conference on Ion Implantation Technology. Institute of Electrical and Electronics Engineers, pp. 527-530. ISBN 9780780332898

K

Kolbe, Michael, Beckhoff, Burkhard, Krumrey, Michael, Reading, Michael A., Van den Berg, Jakob, Conard, Thierry and De Gendt, Stefan (2009) Characterisation of High-k Containing Nanolayers by Reference-Free X-Ray Fluorescence Analysis with Synchrotron Radiation. ECS Transactions, 25 (3). pp. 293-300. ISSN 1938-5862

M

Mohacsi, I., Petrik, P., Fried, M., Lohner, T., Van den Berg, Jakob, Reading, M.A., Giubertoni, D., Barozzi, M. and Parisini, A. (2011) Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted Si. Thin Solid Films, 519 (9). pp. 2847-2851. ISSN 0040-6090

N

Nutsch, Andreas, Beckhoff, Burkhard, Altmann, Roswitha, Van den Berg, Jakob, Giubertoni, D., Hoenicke, Philipp, Bersani, M., Leibold, Andreas, Meirer, F., Müller, Matthias, Pepponi, G., Otto, Michael, Petrik, P., Reading, M., Pfitzner, Lothar and Ryssel, Heiner (2009) Complementary Metrology within a European Joint Laboratory. Solid State Phenomena, 145-14. pp. 97-100. ISSN 1662-9779

Nassiopoulou, A G, Gianneta, V V, Huffman, M, Reading, M A, Van den Berg, Jakob, Tsiaoussis, I and Frangis, N (2008) Self-assembled hexagonal ordering of Si nanocrystals embedded in SiO2 nanodots. Nanotechnology, 19 (49). p. 495605. ISSN 0957-4484

P

Parisini, Andrea, Morandi, Vittorio, Van den Berg, Jakob, Reading, Michael A., Giubertoni, Damiano, Bailey, Paul and Noakes, T. C. Q. (2009) A Combined Approach to the Determination of As Depth Profiling in Si Ultra Shallow Junctions. In: MRS 2009 Fall Meeting, 30th November - 4th December 2011, Boston. (Unpublished)

Petrik, Peter, Milita, Silvia, Pucker, Georg, Nassiopoulou, Androula G., Van den Berg, Jakob, Reading, Michael A., Fried, Miklos, Lohner, Tivadar, Theodoropoulou, M, Gardelis, Spyros, Barozzi, Mario, Ghulinyan, Mher, Lui, Alberto, Vanzetti, Lia and Picciotto, Antonio (2009) Preparation and Characterization of Nanocrystals using Ellipsometry and X-ray Diffraction. ECS Transactions, 25 (3). pp. 373-378. ISSN 1938-5862

Parisini, A., Morandi, V., Solmi, S., Merli, P. G., Giubertoni, D., Bersani, M. and Van den Berg, Jakob (2008) Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy. Applied Physics Letters, 92 (26). p. 261907. ISSN 0003-6951

R

Reading, M. A., Van den Berg, Jakob, Zalm, P. C., Armour, D. G., Bailey, Paul, Noakes, T. C. Q., Parisini, A., Conard, T. and De Gendt, S. (2010) High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high-k layers. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 28 (1). C1C65-70. ISSN 1071-1023

S

Sygellou, L., Ladas, S., Reading, M. A., Van den Berg, Jakob, Conard, T. and De Gendt, S. (2010) A comparative X-ray photoelectron spectroscopy and medium-energy ion-scattering study of ultra-thin, Hf-based high-k films. Surface and Interface Analysis, 42 (6-7). pp. 1057-1060. ISSN 0142-2421

Saheli, G., Conti, G., Uritsky, Y., Foad, M. A., Brundle, C. R., Mack, P., Kouzminov, D., Werner, M. and Van den Berg, Jakob (2008) Characterization of an ultrashallow junction structure using angle resolved x-ray photoelectron spectroscopy and medium energy ion scattering. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 26 (1). pp. 298-304. ISSN 1071-1023

V

Van den Berg, Jaap, Bailey, Paul, Barlow, Roger, Noakes, T.C.Q., Kilcoyne, Susan H. and Cywinski, Robert (2014) The UK MEIS facility: a new future at the IIAA, Huddersfield. In: 23rd Conference on Accelerators in Research and Industry, , 25-30 May 2014, San Antonio, Texas, USA. (Unpublished)

Van den Berg, Jakob, Reading, M.A., Bailey, P., Noakes, T.Q.C., Adelmann, C., Popovici, M., Tielens, H., Conard, T., de Gendt, S. and van Elshocht, S. (2013) Medium energy ion scattering for the high depth resolution characterisation of high-k dielectric layers of nanometer thickness. Applied Surface Science, 281. pp. 8-16. ISSN 0169-4332

Van den Berg, Jakob, Reading, Michael A., Parisini, Andrea, Kolbe, Michael, Beckhoff, Burkhard, Ladas, Spyros, Fried, Miklos, Petrik, Peter, Bailey, Paul, Noakes, Tim, Conard, Thierry and De Gendt, Stefan (2009) High Depth Resolution Depth Profile Analysis of Ultra Thin High-κ Hf Based Films using MEIS Compared with XTEM, XRF, SE and XPS. ECS Transactions, 25 (3). pp. 349-361. ISSN 1938-5862

Van den Berg, Jakob, Reading, M. A., Armour, D. G., Carter, G., Zalm, P. C., Bailey, Paul and Noakes, T. C.Q. (2009) Medium energy ion scattering analysis of the evolution and annealing of damage and associated dopant redistribution of ultra shallow implants in Si. Radiation Effects and Defects in Solids, 164 (7-8). pp. 481-491. ISSN 1042-0150

Van den Berg, Jakob, Armour, D.G., Zhang, S., Whelan, S., Werner, M., Collart, E. H. J., Goldberg, R.D., Bailey, Paul and Noakes, T.C.Q. (2002) Damage and Dopant Profiles Produced by Ultra-Shallow Boron And Arsenic Ion Implants into Silicon at Different Temperatures Characterised by Medium Energy Ion Scattering. MRS Proceedings, 717. ISSN 1946-4274

Van den Berg, Jakob, Armour, D. G., Zhang, S., Whelan, S., Ohno, H., Wang, T.-S., Cullis, A. G., Collart, E. H. J., Goldberg, R. D., Bailey, Paul and Noakes, T. C. Q. (2002) Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 20 (3). p. 974. ISSN 0734-211X

Van den Berg, Jakob, Zhang, S, Whelan, S, Armour, D.G, Goldberg, R.D, Bailey, Paul and Noakes, T.C.Q (2001) Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 183 (1-2). pp. 154-165. ISSN 0168-583X

W

Werner, M., Van den Berg, Jakob, Armour, D. G., Carter, G., Feudel, T., Herden, M., Bersani, M., Giubertoni, D., Ottaviano, L., Bongiorno, C., Mannino, G., Bailey, Paul and Noakes, T. C. Q. (2005) Shallow BF[sub 2] implants in Xe-bombardment-preamorphized Si: The interaction between Xe and F. Applied Physics Letters, 86 (15). p. 151904. ISSN 0003-6951

Werner, M., Van den Berg, Jakob, Armour, D.G., Carter, G., Feudel, T., Herden, M., Bersani, M., Giubertoni, D., Bailey, Paul and Noakes, T.C.Q. (2004) The interaction between Xe and F in Si (100) pre-amorphised with 20keV Xe and implanted with low energy BF2. Materials Science and Engineering: B, 114-11. pp. 198-202. ISSN 0921-5107

Werner, M, Van den Berg, Jakob, Armour, D, Van Der Vorst, W, Collart, E, Goldberg, R, Bailey, Paul and Noakes, T (2004) Damage accumulation and dopant migration during shallow As and Sb implantation into Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 216. pp. 67-74. ISSN 0168-583X

Whelan, S, Armour, D.G, Van den Berg, Jakob, Goldberg, R.D, Zhang, S, Bailey, Paul and Noakes, T.C.Q (2000) Implant temperature dependence of transient-enhanced diffusion in silicon (100) implanted with low-energy arsenic ions. Materials Science in Semiconductor Processing, 3 (4). pp. 285-290. ISSN 1369-8001

Z

Zalm, P. C., Van den Berg, Jakob, van Berkum, J. G. M., Bailey, Paul and Noakes, T. C. Q. (2000) Low-energy grazing-angle argon-ion irradiation of silicon: A viable option for cleaning? Applied Physics Letters, 76 (14). pp. 1887-1889. ISSN 0003-6951

This list was generated on Thu Dec 18 11:31:36 2014 GMT.

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