Raman studies on the effect of multiple-energy ion implantation on single-crystal hexagonal boron nitride

Aradi, Emily, Mervin, Naidoo, Erasmus, Rudolph, Basil, Julies and Derry, Trevor (2014) Raman studies on the effect of multiple-energy ion implantation on single-crystal hexagonal boron nitride. Radiation Effects and Defects in Solids, 170 (3). pp. 175-182. ISSN 1042-0150

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Abstract

Single energy ion implantation of hexagonal boron nitride (h-BN) at various fluences and keV energies has shown that there is a change in the local symmetry of the crystal from hexagonal to the cubic (c-BN) symmetry. These conclusions have been primarily based on Raman scattering (RS) and Fourier transform infrared spectroscopy. Transmission electron microscopy (TEM) analyses have been a challenge because the sample preparation for cross-sectional study of both the polycrystalline substrates and single-crystal material used in the study presented problems that were difficult to circumvent. A multiple-energy implant with different fluence fractions has been used to create a uniform implanted layer in the material from the surface to the end of range of the implant in this study. We report on the initial RS studies on these samples.

Item Type:	Article
Uncontrolled Keywords:	ion implantation, boron nitride, Raman spectroscopy
Subjects:	Q Science > QC Physics
Schools:	School of Applied Sciences
Related URLs:	Author
Depositing User:	Emily Aradi
Date Deposited:	29 Nov 2016 15:09
Last Modified:	29 Nov 2016 15:09
URI:	http://eprints.hud.ac.uk/id/eprint/30297

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