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Aradi, Emily, Mervin, Naidoo, Erasmus, Rudolph, Basil, Julies and Derry, Trevor (2014) Raman studies on the effect of multiple-energy ion implantation on single-crystal hexagonal boron nitride. Radiation Effects and Defects in Solids, 170 (3). pp. 175-182. ISSN 1042-0150
Metadata only available from this repository.Abstract
Single energy ion implantation of hexagonal boron nitride (h-BN) at various fluences and keV energies has shown that there is a change in the local symmetry of the crystal from hexagonal to the cubic (c-BN) symmetry. These conclusions have been primarily based on Raman scattering (RS) and Fourier transform infrared spectroscopy. Transmission electron microscopy (TEM) analyses have been a challenge because the sample preparation for cross-sectional study of both the polycrystalline substrates and single-crystal material used in the study presented problems that were difficult to circumvent. A multiple-energy implant with different fluence fractions has been used to create a uniform implanted layer in the material from the surface to the end of range of the implant in this study. We report on the initial RS studies on these samples.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ion implantation, boron nitride, Raman spectroscopy |
| Subjects: | Q Science > QC Physics |
| Schools: | School of Applied Sciences |
| Related URLs: | |
| Depositing User: | Emily Aradi |
| Date Deposited: | 29 Nov 2016 15:09 |
| Last Modified: | 28 Aug 2021 12:11 |
| URI: | https://eprints.hud.ac.uk/id/eprint/30297 |
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