Changes in the electronic structure of Ti4O7 across the semiconductor–semiconductor-metal transitions

Abbate, M., Potze, R., Sawatzky, G.A., Schlenker, C., Lin, H.J., Tjeng, L.H., Chen, C.T., Teehan, D. and Turner, T.S. (1995) Changes in the electronic structure of Ti4O7 across the semiconductor–semiconductor-metal transitions. Physical Review B, 51 (15). pp. 10150-10153. ISSN 1098-0121

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Abstract

We present and discuss photoemission (PES) and O 1s x-ray-absorption spectra (XAS) of Ti 4 O 7 taken at different temperatures in the range 50–300 K. The PES taken at 300 K show Ti 3d bands at the Fermi level and O 2p bands at higher binding energies. The Ti 3d bands shift approximately 0.25 eV towards higher binding energies in the low-temperature semiconducting phase (50 K). The O 1s XAS are related, via the corresponding metal-oxygen hybridization, to the unoccupied electronic states in the conduction band. The XAS taken at 300 K reflect Ti 3d bands at threshold and Ti 4sp bands at higher photon energies. The Ti 3d bands are split by crystal-field effects into t 2g and e g subbands and shift approximately 0.45 eV towards higher photon energies in the low-temperature semiconducting phase (80 K). The XAS are basically temperature independent in both the low-temperature semiconducting phase and in the high-temperature metallic phase. The main changes in the O 1s XAS appear rather suddenly at the semiconductor-metal transition around 150 K.

Item Type:	Article
Subjects:	Q Science > QC Physics
Schools:	Research and Enterprise Directorate
Related URLs:	Author
Depositing User:	Rosemary Wood
Date Deposited:	27 Mar 2014 15:42
Last Modified:	04 Apr 2018 11:30
URI:	http://eprints.hud.ac.uk/id/eprint/19601

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