Maunoury, C., Dabertrand, K., Martinez, E., Saadoune, M., Lafond, D., Pierre, F., Renault, O., Lhostis, S., Bailey, Paul, Noakes, T. C. Q. and Jalabert, D. (2007) Chemical interface analysis of as grown HfO[sub 2] ultrathin films on SiO[sub 2]. Journal of Applied Physics, 101 (3). 034112. ISSN 0021-8979
Metadata only available from this repository.Abstract
The quality of the interface between a HfO2 high-k gate dielectric and the Si substrate directly influences its electrical properties. The chemical composition of the interfacial region of HfO2 deposited on a SiO2/Si(100) substrate by pulsed liquid injection metal organic chemical vapor deposition at 430 and 550 °C was investigated by medium energy ion scattering, angular resolved x-ray photoemission spectroscopy analysis, and high resolution transmission electron microscopy. It is shown that the HfO2/SiO2 interface is abrupt with low roughness and no silicate. The interface roughness with SiO2 is found to be close to that generally measured in silicon technology (silicon oxide above silicon substrates) [ E. A. Irene, Solid-State Electron., 45, 1207 (2001) ]. The analysis of the experimental results indicates that the deposition technique does not lead to the formation of an extended silicate layer at the HfO2/SiO2 interface
Item Type: | Article |
---|---|
Subjects: | Q Science > Q Science (General) Q Science > QC Physics |
Schools: | School of Applied Sciences |
Related URLs: | |
Depositing User: | Sharon Beastall |
Date Deposited: | 12 Sep 2012 12:27 |
Last Modified: | 28 Aug 2021 11:21 |
URI: | http://eprints.hud.ac.uk/id/eprint/14870 |
Downloads
Downloads per month over past year
Repository Staff Only: item control page
![]() |
View Item |