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Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si

Van den Berg, Jakob, Zhang, S, Whelan, S, Armour, D.G, Goldberg, R.D, Bailey, Paul and Noakes, T.C.Q (2001) Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 183 (1-2). pp. 154-165. ISSN 0168-583X
Information
URI:
https://eprints.hud.ac.uk/id/eprint/14789
URI:
https://eprints.hud.ac.uk/id/eprint/14789
Title:
Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si
Creators:
Van den Berg, Jakob, Zhang, S, Whelan, S, Armour, D.G, Goldberg, R.D, Bailey, Paul and Noakes, T.C.Q
Identification Number:
https://doi.org/10.1016/S0168-583X(00)00683-2
Official URL:
http://dx.doi.org/10.1016/S0168-583X(00)00683-2
Date:
July 2001
Subjects:
Q Science > Q Science (General)
Q Science > QC Physics
Schools:
School of Applied Sciences
Library
Item Type:
Article
Depositing User:
Sharon Beastall
Date Deposited:
11 Sep 2012 09:34
Revision:
12
Last Modified:
28 Aug 2021 11:20
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