Doping of few-layered graphene and carbon nanotubes using ion implantation

Bangert, U., Bleloch, A., Gass, M., Seepujak, A. and Van den Berg, Jakob (2010) Doping of few-layered graphene and carbon nanotubes using ion implantation. Physical Review B, 81 (24). p. 245423. ISSN 1098-0121

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Abstract

Doping of nanostructured materials using a clean, efficient, and site-selective route such as ion implantation would be hugely desirable for realization of large-scale production methods. Here, ion implantation is used to create uniform impurity-atom densities which are both dose and spatially controlled within multiwalled carbon nanotubes and graphene. The technique is demonstrated for a range of dopants, including silver, representing a likely candidate for optical enhancement, and boron, which is predicted to introduce a plasmon within the visible-frequency regime. Electron energy-loss spectroscopy performed within an aberration-corrected scanning transmission electron microscope, in combination with high-angle-annular-dark-field imaging, is used to pinpoint and identify the bonding configuration of single foreign species within the matrix.

Item Type:	Article
Subjects:	Q Science > QC Physics
Schools:	School of Applied Sciences
Related URLs:	Author
Depositing User:	Sharon Beastall
Date Deposited:	03 Jan 2012 12:15
Last Modified:	22 May 2012 14:55
URI:	http://eprints.hud.ac.uk/id/eprint/12269

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