Bangert, U., Bleloch, A., Gass, M., Seepujak, A. and Van den Berg, Jakob (2010) Doping of few-layered graphene and carbon nanotubes using ion implantation. Physical Review B, 81 (24). p. 245423. ISSN 1098-0121
Metadata only available from this repository.Abstract
Doping of nanostructured materials using a clean, efficient, and site-selective route such as ion implantation would be hugely desirable for realization of large-scale production methods. Here, ion implantation is used to create uniform impurity-atom densities which are both dose and spatially controlled within multiwalled carbon nanotubes and graphene. The technique is demonstrated for a range of dopants, including silver, representing a likely candidate for optical enhancement, and boron, which is predicted to introduce a plasmon within the visible-frequency regime. Electron energy-loss spectroscopy performed within an aberration-corrected scanning transmission electron microscope, in combination with high-angle-annular-dark-field imaging, is used to pinpoint and identify the bonding configuration of single foreign species within the matrix.
Item Type: | Article |
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Subjects: | Q Science > QC Physics |
Schools: | School of Applied Sciences |
Related URLs: | |
Depositing User: | Sharon Beastall |
Date Deposited: | 03 Jan 2012 12:15 |
Last Modified: | 28 Aug 2021 11:12 |
URI: | http://eprints.hud.ac.uk/id/eprint/12269 |
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