Kinetics of diamond growth on Si(100) substrate monitored by electron spectroscopy

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Lenormand, F, Ababou, Abdessamad, Carriere, B, Romeo, M, Fayette, L, Marcus, B and Mermoux, M (1993) Kinetics of diamond growth on Si(100) substrate monitored by electron spectroscopy. Diamond and Related Materials, 2 (2-4). pp. 552-557. ISSN 0925-9635

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Official URL: http://dx.doi.org/10.1016/0925-9635(93)90119-M

DOI: 10.1016/0925-9635(93)90119-M

Abstract

The nucleation and growth of diamond on Si(100) were studied by X-ray photoelectron spectroscopy. We focus on the early stages of growth. The main results of this study are that the diamond growth needs an induction period before starting. The surface carbon content drops initially, which is interpreted as the diffusion of silicon to form carbide and/or carbon removal.

Item Type:	Article
Subjects:	Q Science > Q Science (General)
Schools:	School of Applied Sciences
Related URLs:	Author
Depositing User:	Sharon Beastall
Date Deposited:	22 Jan 2010 10:24
Last Modified:	22 Jan 2010 10:24
URI:	http://eprints.hud.ac.uk/id/eprint/6825

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