Search:
Computing and Library Services - delivering an inspiring information environment

An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe

Edmondson, P. D., Abrams, K. J., Hinks, J. A., Greaves, Graeme, Pawley, C. J., Hanif, I. and Donnelly, S. E. (2016) An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe. Scripta Materialia, 113. pp. 190-193. ISSN 1359-6462

[img]
Preview
PDF - Accepted Version
Download (355kB) | Preview

Abstract

Transmission electron microscopy with in situ ion irradiation has been used to examine the ionbeam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms.

Item Type: Article
Subjects: Q Science > QC Physics
Related URLs:
Depositing User: Jonathan Hinks
Date Deposited: 30 Nov 2015 10:21
Last Modified: 23 Nov 2016 08:34
URI: http://eprints.hud.ac.uk/id/eprint/26579

Downloads

Downloads per month over past year

Repository Staff Only: item control page

View Item View Item

University of Huddersfield, Queensgate, Huddersfield, HD1 3DH Copyright and Disclaimer All rights reserved ©