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Investigation of ion induced bending mechanism for nanostructures

Rajput, Nitul S., Tong, Zhen and Luo, Xichun (2014) Investigation of ion induced bending mechanism for nanostructures. Materials Research Express, 2 (1). ISSN 2053-1591

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Abstract

Ion induced bending is a promising controlled technique for manipulating nanoscale structures. However, the underlying mechanism of the process is not well understood. In this letter, we report a detailed study of the bending mechanism of Si nanowires (NWs) under Ga+ irradiation. The microstructural changes in the NW due to ion beam irradiation are studied and molecular dynamics simulations are used to explore the ion–NW interaction processes. The simulation results are compared with the microstructural studies of the NW. The investigations inform a generic understanding of the bending process in crystalline materials, which we suggest to be feasible as a versatile manipulation and integration technique in nanotechnology.

Item Type: Article
Subjects: Q Science > QC Physics
T Technology > TJ Mechanical engineering and machinery
Schools: School of Computing and Engineering > Centre for Precision Technologies
Depositing User: Zhen Tong
Date Deposited: 22 Jul 2015 09:33
Last Modified: 06 Dec 2016 06:46
URI: http://eprints.hud.ac.uk/id/eprint/25251

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