Transit-time limitations in p-i-n photodiodes

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Sibley, Martin J.N. and Bellon, Jacques A. (2000) Transit-time limitations in p-i-n photodiodes. Microwave and Optical Technology Letters, 26 (5). pp. 282-286. ISSN 08952477

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Official URL: http://dx.doi.org/10.1002/1098-2760(20000905)26:5<...

DOI: 10.1002/1098-2760(20000905)26:5<282::AID-MOP2>3.0.CO;2-H

Abstract

A novel derivation for predicting transit-time effects in p-i-n photodiodes is described in which the diode current is found by simple integration. Experimental results obtained from two wide-area photodiodes compare well with theoretical predictions. It is also shown that previously published theory does not agree with these experimental observations.

Item Type:	Article
Subjects:	T Technology > T Technology (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering
Schools:	School of Computing and Engineering School of Computing and Engineering > Systems Engineering Research Group
Related URLs:	Author
Depositing User:	Sara Taylor
Date Deposited:	24 Oct 2008 14:18
Last Modified:	03 Mar 2010 09:07
URI:	http://eprints.hud.ac.uk/id/eprint/2473

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