Sibley, Martin J.N. and Bellon, Jacques A. (2000) Transit-time limitations in p-i-n photodiodes. Microwave and Optical Technology Letters, 26 (5). pp. 282-286. ISSN 08952477Metadata only available from this repository.
A novel derivation for predicting transit-time effects in p-i-n photodiodes is described in which the diode current is found by simple integration. Experimental results obtained from two wide-area photodiodes compare well with theoretical predictions. It is also shown that previously published theory does not agree with these experimental observations.
|Subjects:||T Technology > T Technology (General)|
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Schools:||School of Computing and Engineering|
School of Computing and Engineering > Systems Engineering Research Group
|Depositing User:||Sara Taylor|
|Date Deposited:||24 Oct 2008 14:18|
|Last Modified:||03 Mar 2010 09:07|
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