Lam, Y. C., Tran, D. V., Zheng, H. Y., Murukeshan, V. M., Chai, John and Hardt, D. E. (2004) Surface damage of crystalline silicon by low fluence femtosecond laser pulses. Surface Review and Letters, 11 (02). pp. 217-221. ISSN 0218-625XMetadata only available from this repository.
Crystalline silicon kept at atmospheric pressure was irradiated with 775 nm multiple laser pulses of 150 fs duration at repetition rate 250 Hz. The laser pulses were circularly polarized, with a peak laser fluence of 0.03 J/cm2. We observed surface damage at a much lower fluence and lower number of pulses compared to that reported in the literature. Surface damage, cracks and pits formation were observed. The evolution of the surface damage as a function of the number of laser pulses was recorded. The observations were in contrast to the findings in the literature that the silicon surface became structured when irradiated by multiple pulses.
Read More: http://www.worldscientific.com/doi/abs/10.1142/S0218625X04006074
|Subjects:||T Technology > TJ Mechanical engineering and machinery|
|Schools:||School of Computing and Engineering|
|Depositing User:||John Chai|
|Date Deposited:||03 Mar 2015 14:41|
|Last Modified:||03 Mar 2015 14:41|
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