Sabouri, A., Anthony, C. J., Bowen, J., Vishnyakov, Vladimir and Prewett, P. D. (2014) The effects of dwell time on focused ion beam machining of silicon. Microelectronic Engineering, 121. pp. 24-26. ISSN 0167-9317Metadata only available from this repository.
In this study, the effects of dwell time on Ga+ focused ion beam machining at 30 keV for different milling currents were investigated. The surface topographies were analysed using atomic force microscopy (AFM) and the substrate structures were investigated by means of Raman spectroscopy. It has been observed that by increasing dwell time the total sputtering yield was increased even though the total dose was remained the same. Also the silicon damage by ion bombardment is reduced as the dwell time is increased. This is mainly due to catalyst behaviour of Ga inside Si which over a period of hours causes recrystallization of Si at room temperature by lowering the activation energy for crystallization.
|Uncontrolled Keywords:||Focused ion beams; Ion implantation damage; Dwell time; Raman spectroscopy|
|Subjects:||T Technology > T Technology (General)
T Technology > TJ Mechanical engineering and machinery
|Schools:||School of Computing and Engineering
School of Computing and Engineering > Electron Microscopy and Materials Analysis
|Depositing User:||Sharon Beastall|
|Date Deposited:||09 Oct 2014 12:17|
|Last Modified:||09 Oct 2014 12:32|
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