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In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply

Vallet, M., Barbot, J.F., Oliviero, E., Donnelly, S. E., Hinks, J. A. and Beaufort, M.F. (2014) In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply. Journal of Applied Physics, 115 (22). p. 223515. ISSN 0021-8979

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Abstract

In this work, ion implantations with in situ transmission electron microscopy observations followed by different rates of temperature ramp were performed in (001)-Si to follow the evolution of He-plates under the influence of hydrogen. The JANNUS and MIAMI facilities were used to study the first stages of growth as well as the interactions between co-planar plates. Results showed that under a limited amount of H, the growth of He-plates resulting from a subcritical stress-corrosion mechanism can be fully described by the kinetic model of Johnson-Mehl-Avrami-Kolmogorov with effective activation energy of 0.9 eV. Elastic calculations showed that the sudden and non-isotropic coalescence of close He-plates occurs when the out-of-plane tensile stress between them is close to the yield strength of silicon. After hydrogen absorption, surface minimization of final structure occurs.

Item Type: Article
Subjects: Q Science > QC Physics
Schools: School of Computing and Engineering > Electron Microscopy and Materials Analysis
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Depositing User: Jonathan Hinks
Date Deposited: 08 Jul 2014 11:10
Last Modified: 04 Dec 2016 02:24
URI: http://eprints.hud.ac.uk/id/eprint/21148

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