Peripolli, S., Beaufort, Marie France, Babonneau, David, Rousselet, Sophie, Fichtner, P.F.P., Amaral, L., Oliviero, Erwan, Barbot, Jean François and Donnelly, S. E. (2005) A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon. Solid State Phenomena, 108-10. pp. 357-364. ISSN 1662-9779Metadata only available from this repository.
In the present work, we report on the effects of the implantation temperature on the formation of bubbles and extended defects in Ne+-implanted Si(001) substrates. The implantations were performed at 50 keV to a fluence of 5x1016 cm-2, for distinct implantation temperatures within the 250°C≤Ti≤800°C interval. The samples are investigated using a combination of cross-sectional and plan-view Transmission Electron Microscopy (TEM) observations and Grazing Incidence Small-Angle X-ray Scattering (GISAXS)measurements. In comparison with similar He implants, we demonstrate that the Ne implants can lead to the formation of a much denser bubble system.
|Subjects:||Q Science > QC Physics|
|Schools:||School of Computing and Engineering > Electron Microscopy and Materials Analysis|
|Depositing User:||Graeme Greaves|
|Date Deposited:||02 Oct 2013 11:54|
|Last Modified:||02 Oct 2013 11:54|
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