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Study of nanocrystalline TiN/Si3N4 thin films deposited using a dual ion beam method

Colligon, John, Vishnyakov, Vladimir, Valizadeh, R., Donnelly, S. E. and Kumashiro, S. (2005) Study of nanocrystalline TiN/Si3N4 thin films deposited using a dual ion beam method. Thin Solid Films, 485 (1-2). pp. 148-154. ISSN 0040-6090

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Abstract

A dual ion beam system is used to produce hard nanocomposite TiN/Si3N4 coatings on Si. Cross-sectional high resolution transmission electron microscopy analysis of the coatings shows that ion assistance causes microstructure to change from the non-assisted columnar form to one where there are small crystals present in an amorphous percolation network. For an unheated Si substrate, the microhardness increases with increasing ion-assist energy from 24 to 29 GPa, whereas for a deposition substrate at 400 °C, the microhardness values are 7–8 GPa or higher. The value of microhardness does not change even when coatings are annealed in vacuum at 1000 °C, showing that these coatings have high thermal stability. X-ray photoelectron spectroscopy data indicate that the –Ti–N–Si– bonds expected when the percolation network is formed are present only for substrate temperatures above 600 °C and that Ti–Si bonds form at lower temperature and during excess ion bombardment.

Item Type: Article
Subjects: Q Science > QC Physics
Schools: School of Computing and Engineering > Electron Microscopy and Materials Analysis
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Depositing User: Graeme Greaves
Date Deposited: 01 Oct 2013 11:44
Last Modified: 19 Feb 2015 10:51
URI: http://eprints.hud.ac.uk/id/eprint/18723

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