Donnelly, S. E., Vishnyakov, Vladimir, Carter, G., Terry, J., Haworth, L.I., Sermanni, P. and Birtcher, R.C. (2003) The use of cavities for gettering in silicon microelectronic devices. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 206. pp. 422-426. ISSN 0168-583XMetadata only available from this repository.
This paper presents results from an ongoing three-year project in which the use of microcavities to getter transition metal impurities in silicon-based microelectronic devices has been investigated. The paper reports on the results of a fundamental study of bubble growth mechanisms and on a systematic study of possible detrimental effects of cavity gettering on 1.2 μm p-type metal–oxide-semiconductor field effect transistors.
|Subjects:||Q Science > QC Physics|
|Schools:||School of Computing and Engineering > Electron Microscopy and Materials Analysis|
|Depositing User:||Graeme Greaves|
|Date Deposited:||01 Oct 2013 11:17|
|Last Modified:||09 Oct 2014 10:37|
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