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The use of cavities for gettering in silicon microelectronic devices

Donnelly, S. E., Vishnyakov, Vladimir, Carter, G., Terry, J., Haworth, L.I., Sermanni, P. and Birtcher, R.C. (2003) The use of cavities for gettering in silicon microelectronic devices. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 206. pp. 422-426. ISSN 0168-583X

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Abstract

This paper presents results from an ongoing three-year project in which the use of microcavities to getter transition metal impurities in silicon-based microelectronic devices has been investigated. The paper reports on the results of a fundamental study of bubble growth mechanisms and on a systematic study of possible detrimental effects of cavity gettering on 1.2 μm p-type metal–oxide-semiconductor field effect transistors.

Item Type: Article
Subjects: Q Science > QC Physics
Schools: School of Computing and Engineering > Electron Microscopy and Materials Analysis
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Depositing User: Graeme Greaves
Date Deposited: 01 Oct 2013 11:17
Last Modified: 09 Oct 2014 10:37
URI: http://eprints.hud.ac.uk/id/eprint/18716

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