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Annealing of isolated amorphous zones in silicon

Donnelly, S. E., Birtcher, R. C., Vishnyakov, Vladimir and Carter, G. (2003) Annealing of isolated amorphous zones in silicon. Applied Physics Letters, 82 (12). p. 1860. ISSN 0003-6951

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Abstract

In situ transmission electron microscopy has been used to observe the production and annealing of individual amorphous zones in silicon resulting from impacts of 200-keV Xe ions at room temperature. As has been observed previously, the total amorphous volume fraction decreases over a temperature range from room temperature to approximately 500 °C. When individual amorphous zones were monitored, however, there appeared to be no correlation of the annealing temperature with initial size: zones with similar starting sizes disappeared (crystallized) at temperatures anywhere from 70 °C to more than 400 °C. Frame-by-frame analysis of video recordings revealed that the recovery of individual zones is a two-step process that occurred in a stepwise manner with changes taking place over seconds, separated by longer periods of stability

Item Type: Article
Subjects: Q Science > QC Physics
Schools: School of Computing and Engineering > Electron Microscopy and Materials Analysis
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Depositing User: Graeme Greaves
Date Deposited: 01 Oct 2013 11:31
Last Modified: 09 Oct 2014 10:38
URI: http://eprints.hud.ac.uk/id/eprint/18715

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