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Ion beam deposited epitaxial thin silicon films

Orrman-Rossiter, Kevin G., Al-Bayati, Amir H., Armour, D.G., Donnelly, S. E. and van den Berg, J.A. (1991) Ion beam deposited epitaxial thin silicon films. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59-60 (1). pp. 197-202. ISSN 0168-583X

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Abstract

Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10–200 eV 28Si+ and 30Si+ ions at substrate temperatures in the range 273–1073 K, under ultrahigh-vacuum conditions (deposition pressure View the MathML source). The film crystalhnity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10–40 eV 28Si+ and 30Si+ ions at deposition temperatures in the range 623–823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350–1450 K) gave the best results for epitaxial nucleation, whereas low energy (20–40 eV) Cl+ ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film.

Item Type: Article
Subjects: Q Science > QC Physics
Schools: School of Computing and Engineering > Electron Microscopy and Materials Analysis
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Depositing User: Graeme Greaves
Date Deposited: 02 Oct 2013 08:52
Last Modified: 02 Oct 2013 08:52
URI: http://eprints.hud.ac.uk/id/eprint/18693

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