Renier, M., Lucas, A.A. and Donnelly, S. E. (1985) A new low-energy ion implanter for bombardment of cylindrical surfaces. Vacuum, 35 (12). pp. 577-578. ISSN 0042-207XMetadata only available from this repository.
An ion implanter of cylindrical geometry is described suitable for uniform implantation at a few keV of inert gas ions of narrow energy distribution into conducting targets of axial symmetry. For helium implantation the ion current in the present device can easily be maintained at over 1 mA, allowing high dose implantation of large areas (several tens of cm2) in minutes. For temperature control of the target, a thermal shunt is incorporated. The sizes and the implantation energy of the device are scalable. Reactive gases can also be implanted with the device when operated at lower pressures and ion currents.
|Subjects:||Q Science > QC Physics|
|Schools:||School of Computing and Engineering > Electron Microscopy and Materials Analysis|
|Depositing User:||Graeme Greaves|
|Date Deposited:||02 Oct 2013 08:20|
|Last Modified:||02 Oct 2013 08:20|
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