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Migration and coalescence of Xe nanoprecipitates in Al induced by electron irradiation at 300 K

Allen, C. W., Birtcher, R. C., Donnelly, S. E., Furuya, K., Ishikawa, N. and Song, M. (1999) Migration and coalescence of Xe nanoprecipitates in Al induced by electron irradiation at 300 K. Applied Physics Letters, 74 (18). p. 2611. ISSN 0003-6951

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Abstract

Effects of 1 MeV electron irradiation on Xe precipitates in Al, formed by ion implantation, have been observed in situ by high-voltage transmission electron microscopy. Individual Xe precipitates undergo melting and recrystallization, migration which leads to coalescence, and shape changes. These processes are driven by the production of defects without either cascade defect production or the introduction of additional Xe atoms. Precipitate migration is due to an irradiation-induced surface diffusion process on the Xe/Al interfaces. Coalescence of close precipitates is enhanced by directed motion as a result of the net displacement of Al atoms out of the volume between them.

Item Type: Article
Subjects: Q Science > QC Physics
Schools: School of Computing and Engineering > Electron Microscopy and Materials Analysis
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Depositing User: Graeme Greaves
Date Deposited: 02 Oct 2013 10:35
Last Modified: 02 Oct 2013 10:35
URI: http://eprints.hud.ac.uk/id/eprint/18651

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